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SZESD7371P2T5G

Manufacturer

ON SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
SZESD7371P2T5G is suitable for ESD protection in RF signal applications, including RF switching, power amplifiers, and antenna protection. It is also applicable in USB 2.0 and USB 3.0 interfaces, making it ideal for consumer electronics and telecommunications where space is limited.
Specification
Specification
TVS DIODE 5.3VWM SOD923
TVS DIODE 5.3VWM SOD923
Detailed specification
Detailed specification
Clamp Ipp Tvs Diode Surface Mount SOD-923
Clamp Ipp Tvs Diode Surface Mount SOD-923
Description
Description
The SZESD7371P2T5G is an ultra-low capacitance TVS diode designed for ESD protection of sensitive components. It features a stand-off voltage of 5.3V, low leakage current (<1 nA), and excellent clamping capability. With a maximum capacitance of 0.7 pF and high breakdown voltage, it is ideal for RF applications and compact designs.
The SZESD7371P2T5G is an ultra-low capacitance TVS diode designed for ESD protection of sensitive components. It features a stand-off voltage of 5.3V, low leakage current (<1 nA), and excellent clamping capability. With a maximum capacitance of 0.7 pF and high breakdown voltage, it is ideal for RF applications and compact designs.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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Other manufacturers
SZESD7371P2T5G is also available from the following manufacturers
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