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STD35P6LLF6

Manufacturer

UMW YOUTAI SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
The STD35P6LLF6 is designed for industrial applications, particularly in switching applications where high efficiency and low power loss are critical. Its low on-resistance and high current handling capabilities make it ideal for power management and control circuits in various electronic devices.
Specification
Specification
MOSFET P-CH 60V 35A DPAK
MOSFET P-CH 60V 35A DPAK
Detailed specification
Detailed specification
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Description
Description
The STD35P6LLF6 is a P-Channel MOSFET with a maximum drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 35A. It features a low on-state resistance (RDS(on)) of 0.028 Ω, high avalanche ruggedness, and low gate charge, making it suitable for efficient switching applications. The device supports a total power dissipation (PTOT) of 70W and operates within a temperature range of -55 to 175 °C.
The STD35P6LLF6 is a P-Channel MOSFET with a maximum drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 35A. It features a low on-state resistance (RDS(on)) of 0.028 Ω, high avalanche ruggedness, and low gate charge, making it suitable for efficient switching applications. The device supports a total power dissipation (PTOT) of 70W and operates within a temperature range of -55 to 175 °C.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
STD35P6LLF6 is also available from the following manufacturers
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