SSTA06HZGT116
Manufacturer
ROHM
Data sheet
Data sheet
Specification
Specification
TRANS NPN 80V 0.5A SST3
TRANS NPN 80V 0.5A SST3
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 80 V 500 mA 100 MHz 200 mW surface-mounted SST3
Bipolar (BJT) Transistor NPN 80 V 500 mA 100 MHz 200 mW surface-mounted SST3
Description
Description
The SSTA06HZGT116 is a high-performance NPN bipolar junction transistor (BJT) designed for various electronic applications. It features a maximum collector-emitter voltage of 80V and a continuous collector current rating of 500mA, making it suitable for power amplification and switching applications. With a transition frequency of 100MHz and a power dissipation capability of 200mW, this surface-mounted device (SST3) is ideal for compact circuit designs requiring efficient thermal management and high-frequency operation.
The SSTA06HZGT116 is a high-performance NPN bipolar junction transistor (BJT) designed for various electronic applications. It features a maximum collector-emitter voltage of 80V and a continuous collector current rating of 500mA, making it suitable for power amplification and switching applications. With a transition frequency of 100MHz and a power dissipation capability of 200mW, this surface-mounted device (SST3) is ideal for compact circuit designs requiring efficient thermal management and high-frequency operation.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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