SSM6N67NU,LF(T
Manufacturer
TOSHIBA
Data sheet
Data sheet
Detailed specification
Detailed specification
Trans MOSFET N-CH Si 30V 4A 6-Pin UDFN EP
Trans MOSFET N-CH Si 30V 4A 6-Pin UDFN EP
Description
Description
The SSM6N67NU,LF(T) from Toshiba is a high-performance N-channel MOSFET designed for efficient power management in various electronic applications. With a maximum drain-source voltage of 30V and a continuous drain current rating of 4A, this device is suitable for low-voltage applications. The 6-pin UDFN EP package ensures a compact footprint, making it ideal for space-constrained designs. Its low RDS(on) characteristics contribute to reduced power loss and improved thermal performance, enhancing overall system efficiency.
The SSM6N67NU,LF(T) from Toshiba is a high-performance N-channel MOSFET designed for efficient power management in various electronic applications. With a maximum drain-source voltage of 30V and a continuous drain current rating of 4A, this device is suitable for low-voltage applications. The 6-pin UDFN EP package ensures a compact footprint, making it ideal for space-constrained designs. Its low RDS(on) characteristics contribute to reduced power loss and improved thermal performance, enhancing overall system efficiency.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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