SSM6N58NU,LF(T
Manufacturer
TOSHIBA
Data sheet
Data sheet
Detailed specification
Detailed specification
Trans MOSFET N-CH Si 30V 4A 6-Pin UDFN EP T/R
Trans MOSFET N-CH Si 30V 4A 6-Pin UDFN EP T/R
Description
Description
The SSM6N58NU,LF(T) from Toshiba is a high-performance N-channel MOSFET designed for efficient switching applications. It features a maximum drain-source voltage of 30V and a continuous drain current rating of 4A, making it suitable for various power management tasks. The device is housed in a compact 6-pin UDFN EP package, which allows for space-saving designs in modern electronic circuits. Its low RDS(on) ensures minimal power loss during operation, enhancing overall system efficiency and reliability in demanding applications.
The SSM6N58NU,LF(T) from Toshiba is a high-performance N-channel MOSFET designed for efficient switching applications. It features a maximum drain-source voltage of 30V and a continuous drain current rating of 4A, making it suitable for various power management tasks. The device is housed in a compact 6-pin UDFN EP package, which allows for space-saving designs in modern electronic circuits. Its low RDS(on) ensures minimal power loss during operation, enhancing overall system efficiency and reliability in demanding applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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