SSM6N57NU,LF(T
Manufacturer
TOSHIBA
Data sheet
Data sheet
Detailed specification
Detailed specification
Trans MOSFET N-CH 30V 4A 6-Pin UDFN EP T/R
Trans MOSFET N-CH 30V 4A 6-Pin UDFN EP T/R
Description
Description
The SSM6N57NU,LF(T) from Toshiba is a high-performance N-channel MOSFET designed for efficient power management in various electronic applications. With a maximum drain-source voltage of 30V and a continuous drain current rating of 4A, this device is suitable for low-voltage switching applications. Packaged in a compact 6-pin UDFN EP configuration, it offers excellent thermal performance and space-saving advantages. The MOSFET features low RDS(on) characteristics, ensuring minimal power loss and improved efficiency in circuit designs.
The SSM6N57NU,LF(T) from Toshiba is a high-performance N-channel MOSFET designed for efficient power management in various electronic applications. With a maximum drain-source voltage of 30V and a continuous drain current rating of 4A, this device is suitable for low-voltage switching applications. Packaged in a compact 6-pin UDFN EP configuration, it offers excellent thermal performance and space-saving advantages. The MOSFET features low RDS(on) characteristics, ensuring minimal power loss and improved efficiency in circuit designs.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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