SSM6N56FE,LM(T
Manufacturer
TOSHIBA
Data sheet
Data sheet
Detailed specification
Detailed specification
Trans MOSFET N-CH Si 20V 0.8A 6-Pin ES T/R
Trans MOSFET N-CH Si 20V 0.8A 6-Pin ES T/R
Description
Description
The SSM6N56FE is a high-performance N-channel MOSFET from Toshiba, designed for efficient switching applications. It features a maximum drain-source voltage (Vds) of 20V and a continuous drain current (Id) of 0.8A, making it suitable for low-voltage power management. The device is housed in a compact 6-pin ES package, ensuring minimal footprint on the PCB. With its low RDS(on) characteristics, it provides excellent thermal performance and energy efficiency, ideal for battery-powered devices and portable electronics.
The SSM6N56FE is a high-performance N-channel MOSFET from Toshiba, designed for efficient switching applications. It features a maximum drain-source voltage (Vds) of 20V and a continuous drain current (Id) of 0.8A, making it suitable for low-voltage power management. The device is housed in a compact 6-pin ES package, ensuring minimal footprint on the PCB. With its low RDS(on) characteristics, it provides excellent thermal performance and energy efficiency, ideal for battery-powered devices and portable electronics.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Petra or one of our other skilled sales representatives. They'll help you find the right service option.C