SSM6N36FE,LM(T
Manufacturer
TOSHIBA
Data sheet
Data sheet
Detailed specification
Detailed specification
Trans MOSFET N-CH Si 20V 0.5A 6-Pin ES T/R
Trans MOSFET N-CH Si 20V 0.5A 6-Pin ES T/R
Description
Description
The SSM6N36FE,LM is a high-performance N-channel MOSFET from Toshiba, designed for efficient switching applications. It features a maximum drain-source voltage (Vds) of 20V and a continuous drain current (Id) of 0.5A, making it suitable for low-voltage power management. The device is housed in a compact 6-pin ES package, ensuring minimal footprint on PCBs. With its low RDS(on) characteristics, it provides excellent thermal performance and energy efficiency, ideal for battery-operated devices and portable electronics.
The SSM6N36FE,LM is a high-performance N-channel MOSFET from Toshiba, designed for efficient switching applications. It features a maximum drain-source voltage (Vds) of 20V and a continuous drain current (Id) of 0.5A, making it suitable for low-voltage power management. The device is housed in a compact 6-pin ES package, ensuring minimal footprint on PCBs. With its low RDS(on) characteristics, it provides excellent thermal performance and energy efficiency, ideal for battery-operated devices and portable electronics.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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