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SSM6N35FE,LM(T

Manufacturer

TOSHIBA

data-sheet
Data sheet
Data sheet
The TOSHIBA SSM6N35FE,LM(T) is utilized in high-speed switching and analog switch applications, making it ideal for use in industrial and consumer electronics. Its low on-state resistance and high efficiency at low gate voltages enhance performance in compact electronic designs.
Detailed specification
Detailed specification
TOSHIBA - SSM6N35FE,LM(T - Dual MOSFET, Dual N Channel, 20 V, 180 mA, 3 ohm
TOSHIBA - SSM6N35FE,LM(T - Dual MOSFET, Dual N Channel, 20 V, 180 mA, 3 ohm
Description
Description
The TOSHIBA SSM6N35FE,LM(T) is a dual N-channel MOSFET designed for high-speed switching and analog switch applications. It features a maximum drain-source voltage of 20 V, a drain current of 180 mA, and low on-state resistance (RDS(on)) of 3 Ω at VGS = 4.0 V. The device operates efficiently with a 1.2 V drive and is suitable for various electronic applications.
The TOSHIBA SSM6N35FE,LM(T) is a dual N-channel MOSFET designed for high-speed switching and analog switch applications. It features a maximum drain-source voltage of 20 V, a drain current of 180 mA, and low on-state resistance (RDS(on)) of 3 Ω at VGS = 4.0 V. The device operates efficiently with a 1.2 V drive and is suitable for various electronic applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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