SSM6N17FU(TE85L,F)
Manufacturer
TOSHIBA
Data sheet
Data sheet
Specification
Specification
MOSFET 2N-CH 50V 0.1A US6
MOSFET 2N-CH 50V 0.1A US6
Detailed specification
Detailed specification
Mosfet Array 50V 100mA (Ta) 200mW (Ta) surface-mounted US6
Mosfet Array 50V 100mA (Ta) 200mW (Ta) surface-mounted US6
Description
Description
The SSM6N17FU(TE85L,F) is a 2N-channel MOSFET designed for high-speed switching applications and analog switch applications. It features a maximum drain-source voltage of 50V, a drain current of 100mA, and a power dissipation of 200mW. The device is housed in a compact US6 surface mount package, making it suitable for high-density mounting.
The SSM6N17FU(TE85L,F) is a 2N-channel MOSFET designed for high-speed switching applications and analog switch applications. It features a maximum drain-source voltage of 50V, a drain current of 100mA, and a power dissipation of 200mW. The device is housed in a compact US6 surface mount package, making it suitable for high-density mounting.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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