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Manufacturers

SSM6N16FE,L3F(T

Manufacturer

TOSHIBA

data-sheet
Data sheet
Data sheet
The TOSHIBA SSM6N16FE,L3F(T is utilized in high-speed switching and analog switching applications, making it suitable for industrial and consumer electronics. Its low on-state resistance and compact design allow for efficient performance in high-density circuit layouts, enhancing overall system reliability and efficiency.
Detailed specification
Detailed specification
TOSHIBA - SSM6N16FE,L3F(T - Dual MOSFET, N Channel, 20 V, 100 mA, 3 ohm
TOSHIBA - SSM6N16FE,L3F(T - Dual MOSFET, N Channel, 20 V, 100 mA, 3 ohm
Description
Description
The TOSHIBA SSM6N16FE,L3F(T is a Dual N-Channel MOSFET designed for high-speed and analog switching applications. It features a maximum Drain-Source voltage of 20 V, a Drain current of 100 mA, and a low on-state resistance (RDS(on)) of 3.0 Ω at VGS = 4 V. The device is suitable for high-density mounting due to its compact package, making it ideal for various electronic applications.
The TOSHIBA SSM6N16FE,L3F(T is a Dual N-Channel MOSFET designed for high-speed and analog switching applications. It features a maximum Drain-Source voltage of 20 V, a Drain current of 100 mA, and a low on-state resistance (RDS(on)) of 3.0 Ω at VGS = 4 V. The device is suitable for high-density mounting due to its compact package, making it ideal for various electronic applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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Patrick Wiström031-338 96 64patrick.wistrom@westcomp.se
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Petra Målberg031-338 96 79petra.malberg@westcomp.se
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Richard Mattsson031-338 96 84richard.mattsson@westcomp.se
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