SSM6L61NU,LF(T
Manufacturer
TOSHIBA
Data sheet
Data sheet
Detailed specification
Detailed specification
Trans MOSFET N/P-CH Si 20V 4A 6-Pin UDFN EP T/R
Trans MOSFET N/P-CH Si 20V 4A 6-Pin UDFN EP T/R
Description
Description
The SSM6L61NU,LF(T is a high-performance N-channel MOSFET from Toshiba, designed for efficient power management in various electronic applications. It features a maximum drain-source voltage (Vds) of 20V and a continuous drain current (Id) of 4A, making it suitable for low-voltage applications. The device is housed in a compact 6-pin UDFN EP package, which allows for efficient thermal dissipation and space-saving designs. Its low RDS(on) ensures minimal conduction losses, enhancing overall system efficiency.
The SSM6L61NU,LF(T is a high-performance N-channel MOSFET from Toshiba, designed for efficient power management in various electronic applications. It features a maximum drain-source voltage (Vds) of 20V and a continuous drain current (Id) of 4A, making it suitable for low-voltage applications. The device is housed in a compact 6-pin UDFN EP package, which allows for efficient thermal dissipation and space-saving designs. Its low RDS(on) ensures minimal conduction losses, enhancing overall system efficiency.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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