SSM6L36FE,LM(T
Manufacturer
TOSHIBA
Data sheet
Data sheet
Detailed specification
Detailed specification
Trans MOSFET N/P-CH Si 20V 0.5A/0.33A 6-Pin surface-mounted T/R
Trans MOSFET N/P-CH Si 20V 0.5A/0.33A 6-Pin surface-mounted T/R
Description
Description
The SSM6L36FE,LM is a high-performance N/P-Channel MOSFET from Toshiba, designed for efficient switching applications. It features a maximum drain-source voltage (Vds) of 20V and a continuous drain current (Id) of 0.5A for N-channel and 0.33A for P-channel configurations. Packaged in a compact 6-Pin ES form factor, this MOSFET is ideal for space-constrained designs. Its low on-resistance (RDS(on)) ensures minimal power loss, making it suitable for various electronic applications, including power management and signal switching.
The SSM6L36FE,LM is a high-performance N/P-Channel MOSFET from Toshiba, designed for efficient switching applications. It features a maximum drain-source voltage (Vds) of 20V and a continuous drain current (Id) of 0.5A for N-channel and 0.33A for P-channel configurations. Packaged in a compact 6-Pin ES form factor, this MOSFET is ideal for space-constrained designs. Its low on-resistance (RDS(on)) ensures minimal power loss, making it suitable for various electronic applications, including power management and signal switching.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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