SSM6J212FE,LF(CA
Manufacturer
TOSHIBA
Data sheet
Data sheet
Detailed specification
Detailed specification
Trans MOSFET P-CH Si 20V 4A 6-Pin ES T/R
Trans MOSFET P-CH Si 20V 4A 6-Pin ES T/R
Description
Description
The SSM6J212FE,LF(CA) from Toshiba is a P-channel MOSFET designed for efficient switching applications. It features a maximum drain-source voltage (VDS) of 20V and a continuous drain current (ID) rating of 4A, making it suitable for various power management tasks. The device is housed in a compact 6-pin ES package, ensuring minimal footprint on PCBs. Its low RDS(on) characteristics enhance performance in low-voltage applications, providing reliable operation in consumer electronics, automotive systems, and industrial controls.
The SSM6J212FE,LF(CA) from Toshiba is a P-channel MOSFET designed for efficient switching applications. It features a maximum drain-source voltage (VDS) of 20V and a continuous drain current (ID) rating of 4A, making it suitable for various power management tasks. The device is housed in a compact 6-pin ES package, ensuring minimal footprint on PCBs. Its low RDS(on) characteristics enhance performance in low-voltage applications, providing reliable operation in consumer electronics, automotive systems, and industrial controls.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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