SSM3K56MFV,L3F(T
Manufacturer
TOSHIBA
Data sheet
Data sheet
Detailed specification
Detailed specification
Trans MOSFET N-CH Si 20V 0.8A 3-Pin surface-mounted VESM T/R
Trans MOSFET N-CH Si 20V 0.8A 3-Pin surface-mounted VESM T/R
Description
Description
The SSM3K56MFV,L3F(T is a high-performance N-channel MOSFET from Toshiba, designed for efficient switching applications. It features a maximum drain-source voltage (VDS) of 20V and a continuous drain current (ID) of 0.8A, making it suitable for low-voltage power management. The device is housed in a compact 3-pin VESM package, ensuring minimal footprint on PCBs. With its low RDS(on) characteristics, it provides excellent conduction efficiency, making it ideal for battery-powered devices and other applications requiring reliable power switching.
The SSM3K56MFV,L3F(T is a high-performance N-channel MOSFET from Toshiba, designed for efficient switching applications. It features a maximum drain-source voltage (VDS) of 20V and a continuous drain current (ID) of 0.8A, making it suitable for low-voltage power management. The device is housed in a compact 3-pin VESM package, ensuring minimal footprint on PCBs. With its low RDS(on) characteristics, it provides excellent conduction efficiency, making it ideal for battery-powered devices and other applications requiring reliable power switching.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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