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SSM3K36MFV,L3F(T

Manufacturer

TOSHIBA

data-sheet
Data sheet
Data sheet
SSM3K36MFV,L3F(T is utilized in low-voltage switching applications, including power management circuits, battery-operated devices, and signal switching. Its compact design and efficient performance make it suitable for consumer electronics, automotive systems, and industrial automation, where space and power efficiency are paramount.
Detailed specification
Detailed specification
Trans MOSFET N-CH Si 20V 0.5A 3-Pin surface-mounted VESM T/R
Trans MOSFET N-CH Si 20V 0.5A 3-Pin surface-mounted VESM T/R
Description
Description
The SSM3K36MFV,L3F(T is a high-performance N-channel MOSFET from Toshiba, designed for efficient switching applications. It features a maximum drain-source voltage (VDS) of 20V and a continuous drain current (ID) of 0.5A, making it suitable for low-voltage applications. The device is housed in a compact 3-pin VESM package, ensuring minimal space requirements on PCBs. Its low RDS(on) characteristics enhance power efficiency, making it ideal for battery-powered devices and other applications where power conservation is critical.
The SSM3K36MFV,L3F(T is a high-performance N-channel MOSFET from Toshiba, designed for efficient switching applications. It features a maximum drain-source voltage (VDS) of 20V and a continuous drain current (ID) of 0.5A, making it suitable for low-voltage applications. The device is housed in a compact 3-pin VESM package, ensuring minimal space requirements on PCBs. Its low RDS(on) characteristics enhance power efficiency, making it ideal for battery-powered devices and other applications where power conservation is critical.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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