SSM3J35AMFV,L3F(T
Manufacturer
TOSHIBA
Data sheet
Data sheet
Detailed specification
Detailed specification
Trans MOSFET P-CH Si 20V 0.25A 3-Pin surface-mounted VESM T/R
Trans MOSFET P-CH Si 20V 0.25A 3-Pin surface-mounted VESM T/R
Description
Description
The SSM3J35AMFV,L3F(T) from Toshiba is a P-channel MOSFET designed for low-voltage applications. It features a maximum drain-source voltage (VDS) of 20V and a continuous drain current (ID) of 0.25A, making it suitable for various switching applications. The device is housed in a compact 3-pin VESM package, ensuring efficient thermal management and space-saving design. Its low RDS(on) characteristics enhance power efficiency, making it ideal for battery-powered devices and other applications requiring reliable performance in a small footprint.
The SSM3J35AMFV,L3F(T) from Toshiba is a P-channel MOSFET designed for low-voltage applications. It features a maximum drain-source voltage (VDS) of 20V and a continuous drain current (ID) of 0.25A, making it suitable for various switching applications. The device is housed in a compact 3-pin VESM package, ensuring efficient thermal management and space-saving design. Its low RDS(on) characteristics enhance power efficiency, making it ideal for battery-powered devices and other applications requiring reliable performance in a small footprint.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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