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SP001058824

Manufacturer

INFINEON

data-sheet
Data sheet
Data sheet
BSP171P is suitable for industrial and automotive applications, particularly in low-voltage switching and signal processing. Its features include high efficiency and reliability, making it ideal for use in power management circuits and other electronic devices requiring P-Channel MOSFETs.
Detailed specification
Detailed specification
MOSFET:er P-Ch -60V 1.9A SOT-223-3
MOSFET:er P-Ch -60V 1.9A SOT-223-3
Description
Description
The Infineon BSP171P is a P-Channel MOSFET designed for low-voltage applications. It features a maximum drain-source voltage of -60V and a continuous drain current of -1.9A. The device is avalanche rated, logic level, and has a maximum on-state resistance (RDS(on)) of 0.3Ω at VGS=-4.5V. It is housed in a SOT-223 package and is RoHS compliant.
The Infineon BSP171P is a P-Channel MOSFET designed for low-voltage applications. It features a maximum drain-source voltage of -60V and a continuous drain current of -1.9A. The device is avalanche rated, logic level, and has a maximum on-state resistance (RDS(on)) of 0.3Ω at VGS=-4.5V. It is housed in a SOT-223 package and is RoHS compliant.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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