SP000750498
Manufacturer
INFINEON
Data sheet
Data sheet
Detailed specification
Detailed specification
MOSFET: P-Ch -20V -630mA SOT-323-3
MOSFET: P-Ch -20V -630mA SOT-323-3
Description
Description
The Infineon BSS 209PW is a P-Channel MOSFET designed for low-voltage applications. It features a maximum continuous drain current of -0.63 A, a breakdown voltage of -20 V, and an on-state resistance (RDS(on)) of 550 mΩ at VGS = 4.5 V. This device operates efficiently at temperatures up to 150°C and is suitable for super logic level applications with a gate threshold voltage of -0.6 to -1.2 V.
The Infineon BSS 209PW is a P-Channel MOSFET designed for low-voltage applications. It features a maximum continuous drain current of -0.63 A, a breakdown voltage of -20 V, and an on-state resistance (RDS(on)) of 550 mΩ at VGS = 4.5 V. This device operates efficiently at temperatures up to 150°C and is suitable for super logic level applications with a gate threshold voltage of -0.6 to -1.2 V.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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