SP000011176
Manufacturer
INFINEON
Data sheet
Data sheet
Detailed specification
Detailed specification
Bipolar transistors - BJT AF GP BJT NPN 40V 0.6A
Bipolar transistors - BJT AF GP BJT NPN 40V 0.6A
Description
Description
The SMBT2222A is an NPN silicon switching transistor designed for low collector-emitter saturation voltage applications. It features a maximum collector-emitter voltage of 40V, collector current of 600mA, and total power dissipation of 330mW. The device is RoHS compliant and qualified according to AEC Q101 standards.
The SMBT2222A is an NPN silicon switching transistor designed for low collector-emitter saturation voltage applications. It features a maximum collector-emitter voltage of 40V, collector current of 600mA, and total power dissipation of 330mW. The device is RoHS compliant and qualified according to AEC Q101 standards.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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