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SD57030

Manufacturer

ST MICROELECTRONICS

data-sheet
Data sheet
Data sheet
SD57030 is designed for broadband commercial and industrial applications, particularly in telecommunications. Its high gain and efficiency make it ideal for base station transmitters and other RF applications where linearity and thermal stability are critical.
Specification
Specification
RF MOSFET LDMOS 28V M243
RF MOSFET LDMOS 28V M243
Detailed specification
Detailed specification
RF Mosfet 28 V 50 mA 945MHz 15dB 30W M243
RF Mosfet 28 V 50 mA 945MHz 15dB 30W M243
Description
Description
The SD57030 is an N-channel enhancement-mode LDMOS RF power transistor designed for broadband applications up to 1.0 GHz. It operates at 28 V with a maximum output power of 30 W and a gain of 13 dB at 945 MHz. The device features excellent thermal stability, internal input matching, and is suitable for base station applications requiring high linearity.
The SD57030 is an N-channel enhancement-mode LDMOS RF power transistor designed for broadband applications up to 1.0 GHz. It operates at 28 V with a maximum output power of 30 W and a gain of 13 dB at 945 MHz. The device features excellent thermal stability, internal input matching, and is suitable for base station applications requiring high linearity.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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