SCTWA90N65G2V-4
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Specification
Specification
TRANS SJT N-CH 650V 119A HIP247
TRANS SJT N-CH 650V 119A HIP247
Detailed specification
Detailed specification
N-Channel 650 V 119A (Tc) 565W (Tc) Through Hole HiP247™ Long Leads
N-Channel 650 V 119A (Tc) 565W (Tc) Through Hole HiP247™ Long Leads
Description
Description
The SCTWA90N65G2V-4 is a silicon carbide N-Channel Power MOSFET with a maximum drain-source voltage (VDS) of 650 V and a continuous drain current (ID) of 119 A at a case temperature (Tc) of 25 °C. It features a low on-state resistance (RDS(on)) of 18 mΩ, high thermal stability with a maximum junction temperature of 200 °C, and a robust intrinsic body diode. This device is optimized for high-efficiency applications, including switching mode power supplies and industrial motor control.
The SCTWA90N65G2V-4 is a silicon carbide N-Channel Power MOSFET with a maximum drain-source voltage (VDS) of 650 V and a continuous drain current (ID) of 119 A at a case temperature (Tc) of 25 °C. It features a low on-state resistance (RDS(on)) of 18 mΩ, high thermal stability with a maximum junction temperature of 200 °C, and a robust intrinsic body diode. This device is optimized for high-efficiency applications, including switching mode power supplies and industrial motor control.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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