SCTWA90N65G2V
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Specification
Specification
SILICON CARBIDE POWER MOSFET 650
SILICON CARBIDE POWER MOSFET 650
Detailed specification
Detailed specification
N-Channel 650 V 119A (Tc) 565W (Tc) Through Hole TO-247 Long Leads
N-Channel 650 V 119A (Tc) 565W (Tc) Through Hole TO-247 Long Leads
Description
Description
The SCTWA90N65G2V is a silicon carbide N-Channel Power MOSFET rated for 650 V and 119 A (Tc) with a maximum on-state resistance (RDS(on)) of 24 mΩ. It features high-speed switching performance, a robust intrinsic body diode, and operates at a junction temperature of up to 200 °C. This device is ideal for applications requiring efficient power management.
The SCTWA90N65G2V is a silicon carbide N-Channel Power MOSFET rated for 650 V and 119 A (Tc) with a maximum on-state resistance (RDS(on)) of 24 mΩ. It features high-speed switching performance, a robust intrinsic body diode, and operates at a junction temperature of up to 200 °C. This device is ideal for applications requiring efficient power management.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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