SCTWA70N120G2V-4
Manufacturer
ST MICROELECTRONICS
Specification
Specification
DISCRETE
DISCRETE
Detailed specification
Detailed specification
N-Channel 1200 V 91A (Tc) 547W Through Hole TO-247-4
N-Channel 1200 V 91A (Tc) 547W Through Hole TO-247-4
Description
Description
The SCTWA70N120G2V-4 from STMicroelectronics is a high-performance N-Channel MOSFET designed for demanding applications. It features a maximum drain-source voltage of 1200 V and a continuous drain current rating of 91 A at a case temperature (Tc) of 25°C. With a power dissipation capability of 547 W, this device is housed in a TO-247-4 package, ensuring robust thermal management and reliability. Its discrete design allows for easy integration into various power electronic circuits, making it suitable for high-voltage applications.
The SCTWA70N120G2V-4 from STMicroelectronics is a high-performance N-Channel MOSFET designed for demanding applications. It features a maximum drain-source voltage of 1200 V and a continuous drain current rating of 91 A at a case temperature (Tc) of 25°C. With a power dissipation capability of 547 W, this device is housed in a TO-247-4 package, ensuring robust thermal management and reliability. Its discrete design allows for easy integration into various power electronic circuits, making it suitable for high-voltage applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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