SCTWA60N120G2-4
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Specification
Specification
SILICON CARBIDE POWER MOSFET 120
SILICON CARBIDE POWER MOSFET 120
Detailed specification
Detailed specification
N-Channel 1200 V 60A (Tc) 388W (Tc) Through Hole TO-247-4
N-Channel 1200 V 60A (Tc) 388W (Tc) Through Hole TO-247-4
Description
Description
The SCTWA60N120G2-4 is a silicon carbide N-Channel Power MOSFET with a maximum drain-source voltage of 1200 V and a continuous drain current of 60 A at Tc = 25 °C. It features a low on-resistance of 52 mΩ, a robust intrinsic body diode, and high thermal performance with a junction temperature capability of 200 °C. This device is ideal for high-efficiency applications due to its low gate charge and excellent switching characteristics.
The SCTWA60N120G2-4 is a silicon carbide N-Channel Power MOSFET with a maximum drain-source voltage of 1200 V and a continuous drain current of 60 A at Tc = 25 °C. It features a low on-resistance of 52 mΩ, a robust intrinsic body diode, and high thermal performance with a junction temperature capability of 200 °C. This device is ideal for high-efficiency applications due to its low gate charge and excellent switching characteristics.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Martin or one of our other skilled sales representatives. They'll help you find the right service option.C