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SCTWA50N120

Manufacturer

ST MICROELECTRONICS

data-sheet
Data sheet
Data sheet
SCTWA50N120 is ideal for high-efficiency applications in solar inverters, uninterruptible power supplies (UPS), motor drives, high voltage DC-DC converters, and switch mode power supplies. Its advanced thermal and electrical characteristics make it suitable for industrial and automotive domains.
Detailed specification
Detailed specification
SiC-MOSFET: Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm
SiC-MOSFET: Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm
Description
Description
The SCTWA50N120 is a Silicon Carbide Power MOSFET featuring a voltage rating of 1200 V, a continuous drain current of 65 A, and a typical on-state resistance (RDS(on)) of 59 mΩ at TJ=150 °C. It is designed for high-efficiency applications, offering excellent thermal performance and fast switching capabilities, making it suitable for demanding power conversion tasks.
The SCTWA50N120 is a Silicon Carbide Power MOSFET featuring a voltage rating of 1200 V, a continuous drain current of 65 A, and a typical on-state resistance (RDS(on)) of 59 mΩ at TJ=150 °C. It is designed for high-efficiency applications, offering excellent thermal performance and fast switching capabilities, making it suitable for demanding power conversion tasks.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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