SCTWA50N120
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Detailed specification
Detailed specification
SiC-MOSFET: Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm
SiC-MOSFET: Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm
Description
Description
The SCTWA50N120 is a Silicon Carbide Power MOSFET featuring a voltage rating of 1200 V, a continuous drain current of 65 A, and a typical on-state resistance (RDS(on)) of 59 mΩ at TJ=150 °C. It is designed for high-efficiency applications, offering excellent thermal performance and fast switching capabilities, making it suitable for demanding power conversion tasks.
The SCTWA50N120 is a Silicon Carbide Power MOSFET featuring a voltage rating of 1200 V, a continuous drain current of 65 A, and a typical on-state resistance (RDS(on)) of 59 mΩ at TJ=150 °C. It is designed for high-efficiency applications, offering excellent thermal performance and fast switching capabilities, making it suitable for demanding power conversion tasks.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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