SCTWA40N120G2V
Manufacturer
ST MICROELECTRONICS
Specification
Specification
DISCRETE
DISCRETE
Detailed specification
Detailed specification
N-Channel 1200 V 36A (Tc) 278W (Tc) Through Hole TO-247 Long Leads
N-Channel 1200 V 36A (Tc) 278W (Tc) Through Hole TO-247 Long Leads
Description
Description
The SCTWA40N120G2V from STMicroelectronics is a high-performance N-Channel MOSFET designed for demanding applications. It features a maximum drain-source voltage of 1200 V and a continuous drain current rating of 36 A at a case temperature (Tc) of 25°C. With a power dissipation capability of 278 W (Tc), this device is housed in a TO-247 package with long leads, facilitating easy mounting and thermal management. Its discrete design ensures reliability in high-voltage applications, making it suitable for power conversion and motor control systems.
The SCTWA40N120G2V from STMicroelectronics is a high-performance N-Channel MOSFET designed for demanding applications. It features a maximum drain-source voltage of 1200 V and a continuous drain current rating of 36 A at a case temperature (Tc) of 25°C. With a power dissipation capability of 278 W (Tc), this device is housed in a TO-247 package with long leads, facilitating easy mounting and thermal management. Its discrete design ensures reliability in high-voltage applications, making it suitable for power conversion and motor control systems.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Petra or one of our other skilled sales representatives. They'll help you find the right service option.C