SCTWA35N65G2V-4
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Specification
Specification
DISCRETE
DISCRETE
Detailed specification
Detailed specification
N-Channel 650 V 45A (Tc) 240W (Tc) Through Hole TO-247-4
N-Channel 650 V 45A (Tc) 240W (Tc) Through Hole TO-247-4
Description
Description
The SCTWA35N65G2V-4 is a silicon carbide N-Channel Power MOSFET with a maximum drain-source voltage of 650 V and a continuous drain current of 45 A at Tc = 25 °C. It features a low on-resistance (RDS(on) max. 67 mΩ) and a robust intrinsic body diode, making it suitable for high-efficiency applications. The device operates at a high junction temperature of up to 200 °C, ideal for demanding environments.
The SCTWA35N65G2V-4 is a silicon carbide N-Channel Power MOSFET with a maximum drain-source voltage of 650 V and a continuous drain current of 45 A at Tc = 25 °C. It features a low on-resistance (RDS(on) max. 67 mΩ) and a robust intrinsic body diode, making it suitable for high-efficiency applications. The device operates at a high junction temperature of up to 200 °C, ideal for demanding environments.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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