SCTWA35N65G2V
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Specification
Specification
TRANS SJT N-CH 650V 45A TO247
TRANS SJT N-CH 650V 45A TO247
Detailed specification
Detailed specification
N-Channel 650 V 45A (Tc) 208W (Tc) Through Hole TO-247 Long Leads
N-Channel 650 V 45A (Tc) 208W (Tc) Through Hole TO-247 Long Leads
Description
Description
The SCTWA35N65G2V is a silicon carbide N-Channel Power MOSFET rated for 650 V and 45 A (Tc) with a maximum on-state resistance (RDS(on)) of 67 mΩ. It features a robust intrinsic body diode, low gate charge, and high junction temperature capability (TJ = 200 °C). This device is housed in a TO-247 package with long leads, designed for efficient thermal management and high-performance applications.
The SCTWA35N65G2V is a silicon carbide N-Channel Power MOSFET rated for 650 V and 45 A (Tc) with a maximum on-state resistance (RDS(on)) of 67 mΩ. It features a robust intrinsic body diode, low gate charge, and high junction temperature capability (TJ = 200 °C). This device is housed in a TO-247 package with long leads, designed for efficient thermal management and high-performance applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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