SCTWA30N120
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Specification
Specification
IC POWER MOSFET 1200V HIP247
IC POWER MOSFET 1200V HIP247
Detailed specification
Detailed specification
N-Channel 1200 V 45A (Tc) 270W (Tc) Through Hole HiP247™ Long Leads
N-Channel 1200 V 45A (Tc) 270W (Tc) Through Hole HiP247™ Long Leads
Description
Description
The SCTWA30N120 is a silicon carbide N-Channel Power MOSFET with a voltage rating of 1200V and a continuous drain current of 45A at Tc = 25 °C. It features a low on-resistance of 90 mΩ (typ. at TJ = 150 °C) and a total power dissipation of 270W. The device is housed in a HiP247™ long leads package, designed for high-efficiency applications with excellent thermal performance and robust switching characteristics.
The SCTWA30N120 is a silicon carbide N-Channel Power MOSFET with a voltage rating of 1200V and a continuous drain current of 45A at Tc = 25 °C. It features a low on-resistance of 90 mΩ (typ. at TJ = 150 °C) and a total power dissipation of 270W. The device is housed in a HiP247™ long leads package, designed for high-efficiency applications with excellent thermal performance and robust switching characteristics.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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