SCTWA20N120
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Specification
Specification
IC POWER MOSFET 1200V HIP247
IC POWER MOSFET 1200V HIP247
Detailed specification
Detailed specification
N-Channel 1200 V 20A (Tc) 175W (Tc) Through Hole HiP247™ Long Leads
N-Channel 1200 V 20A (Tc) 175W (Tc) Through Hole HiP247™ Long Leads
Description
Description
The SCTWA20N120 is a silicon carbide N-channel Power MOSFET with a voltage rating of 1200 V and a continuous drain current of 20 A. It features a low on-resistance of 189 mΩ (typical at TJ=150 °C) and a total dissipation of 175 W. Designed in a HiP247 long leads package, it offers excellent thermal performance and is suitable for high-efficiency applications.
The SCTWA20N120 is a silicon carbide N-channel Power MOSFET with a voltage rating of 1200 V and a continuous drain current of 20 A. It features a low on-resistance of 189 mΩ (typical at TJ=150 °C) and a total dissipation of 175 W. Designed in a HiP247 long leads package, it offers excellent thermal performance and is suitable for high-efficiency applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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