SCTW70N120G2V
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Specification
Specification
TRANS SJT N-CH 1200V 91A HIP247
TRANS SJT N-CH 1200V 91A HIP247
Detailed specification
Detailed specification
N-Channel 1200 V 91A (Tc) 547W (Tc) Through Hole HiP247™
N-Channel 1200 V 91A (Tc) 547W (Tc) Through Hole HiP247™
Description
Description
The SCTW70N120G2V is a silicon carbide N-Channel Power MOSFET with a maximum drain-source voltage of 1200 V and a continuous drain current of 91 A. It features a low on-resistance of 30 mΩ, a robust intrinsic body diode, and high thermal performance with a junction temperature rating of 200 °C. Ideal for high-efficiency applications, it offers excellent switching characteristics and low gate charge.
The SCTW70N120G2V is a silicon carbide N-Channel Power MOSFET with a maximum drain-source voltage of 1200 V and a continuous drain current of 91 A. It features a low on-resistance of 30 mΩ, a robust intrinsic body diode, and high thermal performance with a junction temperature rating of 200 °C. Ideal for high-efficiency applications, it offers excellent switching characteristics and low gate charge.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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