SCTW60N120G2
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Specification
Specification
DISCRETE
DISCRETE
Detailed specification
Detailed specification
N-Channel 1200 V 60A (Tc) 389W (Tc) Through Hole surface-mounted HiP247™
N-Channel 1200 V 60A (Tc) 389W (Tc) Through Hole surface-mounted HiP247™
Description
Description
The SCTW60N120G2 is a silicon carbide N-Channel Power MOSFET with a maximum drain-source voltage (VDS) of 1200 V and a continuous drain current (ID) of 60 A. It features a low on-resistance (RDS(on)) of 52 mΩ, a robust intrinsic body diode, and high thermal performance with a junction temperature capability of 200 °C. Ideal for high-efficiency applications, it offers excellent switching characteristics and low gate charge.
The SCTW60N120G2 is a silicon carbide N-Channel Power MOSFET with a maximum drain-source voltage (VDS) of 1200 V and a continuous drain current (ID) of 60 A. It features a low on-resistance (RDS(on)) of 52 mΩ, a robust intrinsic body diode, and high thermal performance with a junction temperature capability of 200 °C. Ideal for high-efficiency applications, it offers excellent switching characteristics and low gate charge.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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