SCTW40N120G2VAG
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Specification
Specification
SICFET N-CH 1200V 33A HIP247
SICFET N-CH 1200V 33A HIP247
Detailed specification
Detailed specification
N-Channel 1200 V 33A (Tc) 290W (Tc) Through Hole HiP247™
N-Channel 1200 V 33A (Tc) 290W (Tc) Through Hole HiP247™
Description
Description
The SCTW40N120G2VAG is a silicon carbide N-Channel Power MOSFET with a maximum drain-source voltage (VDS) of 1200 V and a continuous drain current (ID) of 33 A. It features a low on-resistance (RDS(on)) of 105 mΩ, high thermal stability with a maximum junction temperature (TJ) of 200 °C, and is AEC-Q101 qualified, making it suitable for demanding applications.
The SCTW40N120G2VAG is a silicon carbide N-Channel Power MOSFET with a maximum drain-source voltage (VDS) of 1200 V and a continuous drain current (ID) of 33 A. It features a low on-resistance (RDS(on)) of 105 mΩ, high thermal stability with a maximum junction temperature (TJ) of 200 °C, and is AEC-Q101 qualified, making it suitable for demanding applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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