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SCTW40N120G2V

Manufacturer

ST MICROELECTRONICS

data-sheet
Data sheet
Data sheet
SCTW40N120G2V is ideal for industrial applications, particularly in switching mode power supplies and DC-DC converters. Its robust design and high-temperature capability make it suitable for demanding environments, ensuring reliable performance in motor control and power management systems.
Specification
Specification
SILICON CARBIDE POWER MOSFET 120
SILICON CARBIDE POWER MOSFET 120
Detailed specification
Detailed specification
N-Channel 1200 V 36A (Tc) 278W (Tc) Through Hole HiP247™
N-Channel 1200 V 36A (Tc) 278W (Tc) Through Hole HiP247™
Description
Description
The SCTW40N120G2V is a silicon carbide N-Channel Power MOSFET designed for high-performance applications. It features a maximum drain-source voltage (VDS) of 1200 V, a maximum continuous drain current (ID) of 36 A, and a low on-resistance (RDS(on)) of 100 mΩ. This device operates efficiently at high temperatures (TJ = 200 °C) and is suitable for switching mode power supplies and industrial motor control.
The SCTW40N120G2V is a silicon carbide N-Channel Power MOSFET designed for high-performance applications. It features a maximum drain-source voltage (VDS) of 1200 V, a maximum continuous drain current (ID) of 36 A, and a low on-resistance (RDS(on)) of 100 mΩ. This device operates efficiently at high temperatures (TJ = 200 °C) and is suitable for switching mode power supplies and industrial motor control.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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