SCTW40N120G2V
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Specification
Specification
SILICON CARBIDE POWER MOSFET 120
SILICON CARBIDE POWER MOSFET 120
Detailed specification
Detailed specification
N-Channel 1200 V 36A (Tc) 278W (Tc) Through Hole HiP247™
N-Channel 1200 V 36A (Tc) 278W (Tc) Through Hole HiP247™
Description
Description
The SCTW40N120G2V is a silicon carbide N-Channel Power MOSFET designed for high-performance applications. It features a maximum drain-source voltage (VDS) of 1200 V, a maximum continuous drain current (ID) of 36 A, and a low on-resistance (RDS(on)) of 100 mΩ. This device operates efficiently at high temperatures (TJ = 200 °C) and is suitable for switching mode power supplies and industrial motor control.
The SCTW40N120G2V is a silicon carbide N-Channel Power MOSFET designed for high-performance applications. It features a maximum drain-source voltage (VDS) of 1200 V, a maximum continuous drain current (ID) of 36 A, and a low on-resistance (RDS(on)) of 100 mΩ. This device operates efficiently at high temperatures (TJ = 200 °C) and is suitable for switching mode power supplies and industrial motor control.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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