SCTW35N65G2V
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Specification
Specification
SICFET N-CH 650V 45A HIP247
SICFET N-CH 650V 45A HIP247
Detailed specification
Detailed specification
N-Channel 650 V 45A (Tc) 240W (Tc) Through Hole HiP247™
N-Channel 650 V 45A (Tc) 240W (Tc) Through Hole HiP247™
Description
Description
The SCTW35N65G2V is a silicon carbide N-Channel Power MOSFET rated for 650V and 45A, featuring a maximum RDS(on) of 67 mΩ. It offers excellent switching performance with low gate charge and input capacitance, and operates at high junction temperatures up to 200°C. Ideal for high-efficiency applications.
The SCTW35N65G2V is a silicon carbide N-Channel Power MOSFET rated for 650V and 45A, featuring a maximum RDS(on) of 67 mΩ. It offers excellent switching performance with low gate charge and input capacitance, and operates at high junction temperatures up to 200°C. Ideal for high-efficiency applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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