SCTW100N65G2AG
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Specification
Specification
SICFET N-CH 650V 100A HIP247
SICFET N-CH 650V 100A HIP247
Detailed specification
Detailed specification
N-Channel 650 V 100A (Tc) 420W (Tc) Through Hole surface-mounted HiP247™
N-Channel 650 V 100A (Tc) 420W (Tc) Through Hole surface-mounted HiP247™
Description
Description
The SCTW100N65G2AG is a silicon carbide N-Channel Power MOSFET rated for 650V and 100A, featuring a maximum RDS(on) of 26 mΩ. It offers excellent switching performance with low gate charge and high thermal stability, making it suitable for demanding applications in electric traction and onboard chargers.
The SCTW100N65G2AG is a silicon carbide N-Channel Power MOSFET rated for 650V and 100A, featuring a maximum RDS(on) of 26 mΩ. It offers excellent switching performance with low gate charge and high thermal stability, making it suitable for demanding applications in electric traction and onboard chargers.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Martin or one of our other skilled sales representatives. They'll help you find the right service option.C