SCTL90N65G2V
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Specification
Specification
SILICON CARBIDE POWER MOSFET 650
SILICON CARBIDE POWER MOSFET 650
Detailed specification
Detailed specification
N-Channel 650 V 40A (Tc) 935W (Tc) surface-mounted PowerFlat™ (8x8) HV
N-Channel 650 V 40A (Tc) 935W (Tc) surface-mounted PowerFlat™ (8x8) HV
Description
Description
The SCTL90N65G2V is a silicon carbide N-Channel Power MOSFET rated for 650 V and 40 A (Tc) with a maximum power dissipation of 935 W (Tc). It features a low on-resistance of 24 mΩ, a robust intrinsic body diode, and low capacitances, making it suitable for high-efficiency applications.
The SCTL90N65G2V is a silicon carbide N-Channel Power MOSFET rated for 650 V and 40 A (Tc) with a maximum power dissipation of 935 W (Tc). It features a low on-resistance of 24 mΩ, a robust intrinsic body diode, and low capacitances, making it suitable for high-efficiency applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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