SCTL35N65G2V
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Specification
Specification
TRANS SJT N-CH 650V PWRFLAT HV
TRANS SJT N-CH 650V PWRFLAT HV
Detailed specification
Detailed specification
N-Channel 650 V 40A (Tc) 417W (Tc) surface-mounted PowerFlat™ (8x8) HV
N-Channel 650 V 40A (Tc) 417W (Tc) surface-mounted PowerFlat™ (8x8) HV
Description
Description
The SCTL35N65G2V is a silicon carbide N-Channel Power MOSFET with a voltage rating of 650 V and a maximum continuous drain current of 40 A. It features a low on-state resistance (RDS(on)) of 67 mΩ and a total power dissipation of 417 W. This device is designed for high efficiency and excellent switching performance, making it suitable for demanding applications.
The SCTL35N65G2V is a silicon carbide N-Channel Power MOSFET with a voltage rating of 650 V and a maximum continuous drain current of 40 A. It features a low on-state resistance (RDS(on)) of 67 mΩ and a total power dissipation of 417 W. This device is designed for high efficiency and excellent switching performance, making it suitable for demanding applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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