SCTH90N65G2V-7
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Specification
Specification
SICFET N-CH 650V 90A H2PAK-7
SICFET N-CH 650V 90A H2PAK-7
Detailed specification
Detailed specification
N-Channel 650 V 90A (Tc) 330W (Tc) surface-mounted H2PAK-7
N-Channel 650 V 90A (Tc) 330W (Tc) surface-mounted H2PAK-7
Description
Description
The SCTH90N65G2V-7 is a silicon carbide N-Channel MOSFET rated for 650V and 90A, housed in an H2PAK-7 package. It features a maximum RDS(on) of 24 mΩ, high junction temperature capability (TJ = 175 °C), and low gate charge, making it suitable for high-frequency applications and efficient power conversion.
The SCTH90N65G2V-7 is a silicon carbide N-Channel MOSFET rated for 650V and 90A, housed in an H2PAK-7 package. It features a maximum RDS(on) of 24 mΩ, high junction temperature capability (TJ = 175 °C), and low gate charge, making it suitable for high-frequency applications and efficient power conversion.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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