SCTH70N120G2V-7
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Specification
Specification
SILICON CARBIDE POWER MOSFET 120
SILICON CARBIDE POWER MOSFET 120
Detailed specification
Detailed specification
N-Channel 1200 V 90A (Tc) 469W (Tc) Surface Mount H2PAK-7
N-Channel 1200 V 90A (Tc) 469W (Tc) Surface Mount H2PAK-7
Description
Description
The SCTH70N120G2V-7 is a silicon carbide N-Channel Power MOSFET designed for high-performance applications. It features a maximum drain-source voltage (VDS) of 1200 V, a continuous drain current (ID) of 90 A, and a low on-state resistance (RDS(on)) of 30 mΩ. This device is optimized for switching mode power supplies and DC-DC converters, providing excellent efficiency and thermal performance.
The SCTH70N120G2V-7 is a silicon carbide N-Channel Power MOSFET designed for high-performance applications. It features a maximum drain-source voltage (VDS) of 1200 V, a continuous drain current (ID) of 90 A, and a low on-state resistance (RDS(on)) of 30 mΩ. This device is optimized for switching mode power supplies and DC-DC converters, providing excellent efficiency and thermal performance.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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