SCTH60N120G2-7
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Specification
Specification
SICFET N-CH 1200V 60A H2PAK-7
SICFET N-CH 1200V 60A H2PAK-7
Detailed specification
Detailed specification
N-Channel 1200 V 60A (Tc) 390W (Tc) surface-mounted H2PAK-7
N-Channel 1200 V 60A (Tc) 390W (Tc) surface-mounted H2PAK-7
Description
Description
The SCTH60N120G2-7 is a silicon carbide N-Channel Power MOSFET rated for 1200V and 60A, housed in an H2PAK-7 package. It features a maximum RDS(on) of 52 mΩ, low gate charge, and excellent switching performance, making it suitable for high-efficiency applications. Its robust intrinsic body diode enhances reliability in switching applications.
The SCTH60N120G2-7 is a silicon carbide N-Channel Power MOSFET rated for 1200V and 60A, housed in an H2PAK-7 package. It features a maximum RDS(on) of 52 mΩ, low gate charge, and excellent switching performance, making it suitable for high-efficiency applications. Its robust intrinsic body diode enhances reliability in switching applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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