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SCTH40N120G2V-7

Manufacturer

ST MICROELECTRONICS

data-sheet
Data sheet
Data sheet
SCTH40N120G2V-7 is designed for industrial applications, including switching mode power supplies and DC-DC converters. Its low on-resistance and high thermal performance make it ideal for motor control and other high-efficiency power management systems.
Specification
Specification
SILICON CARBIDE POWER MOSFET 120
SILICON CARBIDE POWER MOSFET 120
Detailed specification
Detailed specification
N-Channel 1200 V 36A (Tc) 238W (Tc) surface-mounted H2PAK-7
N-Channel 1200 V 36A (Tc) 238W (Tc) surface-mounted H2PAK-7
Description
Description
The SCTH40N120G2V-7 is a silicon carbide N-Channel Power MOSFET with a maximum drain-source voltage of 1200 V and a continuous drain current of 36 A at a case temperature of 25 °C. It features a low on-resistance of 100 mΩ, high thermal stability (TJ = 175 °C), and excellent switching performance, making it suitable for high-efficiency applications.
The SCTH40N120G2V-7 is a silicon carbide N-Channel Power MOSFET with a maximum drain-source voltage of 1200 V and a continuous drain current of 36 A at a case temperature of 25 °C. It features a low on-resistance of 100 mΩ, high thermal stability (TJ = 175 °C), and excellent switching performance, making it suitable for high-efficiency applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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