SCTH35N65G2V-7AG
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Specification
Specification
SICFET N-CH 650V 45A H2PAK-7
SICFET N-CH 650V 45A H2PAK-7
Detailed specification
Detailed specification
N-Channel 650 V 45A (Tc) 208W (Tc) surface-mounted H2PAK-7
N-Channel 650 V 45A (Tc) 208W (Tc) surface-mounted H2PAK-7
Description
Description
The SCTH35N65G2V-7AG is a silicon carbide N-Channel Power MOSFET rated for 650V and 45A, housed in an H2PAK-7 package. It features a maximum RDS(on) of 67 mΩ, low gate charge, and robust switching performance, making it suitable for high-efficiency applications in electric traction and DC/DC converters.
The SCTH35N65G2V-7AG is a silicon carbide N-Channel Power MOSFET rated for 650V and 45A, housed in an H2PAK-7 package. It features a maximum RDS(on) of 67 mΩ, low gate charge, and robust switching performance, making it suitable for high-efficiency applications in electric traction and DC/DC converters.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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