SCTH100N65G2-7AG
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Specification
Specification
SICFET N-CH 650V 95A H2PAK-7
SICFET N-CH 650V 95A H2PAK-7
Detailed specification
Detailed specification
N-Channel 650 V 95A (Tc) 360W (Tc) surface-mounted H2PAK-7
N-Channel 650 V 95A (Tc) 360W (Tc) surface-mounted H2PAK-7
Description
Description
The SCTH100N65G2-7AG is a silicon carbide N-Channel Power MOSFET with a voltage rating of 650V and a continuous drain current of 95A. It features a maximum on-state resistance (RDS(on)) of 26 mΩ and a total power dissipation of 360W. This device is designed for high-efficiency applications, including electric traction inverters and DC/DC converters for electric vehicles.
The SCTH100N65G2-7AG is a silicon carbide N-Channel Power MOSFET with a voltage rating of 650V and a continuous drain current of 95A. It features a maximum on-state resistance (RDS(on)) of 26 mΩ and a total power dissipation of 360W. This device is designed for high-efficiency applications, including electric traction inverters and DC/DC converters for electric vehicles.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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