SCT50N120
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Specification
Specification
SICFET N-CH 1200V 65A HIP247
SICFET N-CH 1200V 65A HIP247
Detailed specification
Detailed specification
N-Channel 1200 V 65A (Tc) 318W (Tc) Through Hole HiP247™
N-Channel 1200 V 65A (Tc) 318W (Tc) Through Hole HiP247™
Description
Description
The SCT50N120 is a Silicon Carbide N-Channel Power MOSFET with a voltage rating of 1200 V and a continuous drain current of 65 A. It features a low on-resistance of 59 mΩ at 150 °C and a total dissipation of 318 W. The device is designed for high-efficiency applications, offering excellent thermal performance and fast switching capabilities, making it suitable for solar inverters, UPS, motor drives, and high voltage DC-DC converters.
The SCT50N120 is a Silicon Carbide N-Channel Power MOSFET with a voltage rating of 1200 V and a continuous drain current of 65 A. It features a low on-resistance of 59 mΩ at 150 °C and a total dissipation of 318 W. The device is designed for high-efficiency applications, offering excellent thermal performance and fast switching capabilities, making it suitable for solar inverters, UPS, motor drives, and high voltage DC-DC converters.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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