SCT4036KEHRC11
Manufacturer
ROHM
Data sheet
Data sheet
Specification
Specification
1200V, 43A, 3-PIN THD, TRENCH-ST
1200V, 43A, 3-PIN THD, TRENCH-ST
Detailed specification
Detailed specification
N-Channel 1200 V 43A (Tc) 176W Through Hole TO-247N
N-Channel 1200 V 43A (Tc) 176W Through Hole TO-247N
Description
Description
The SCT4036KEHRC11 from Rohm Semiconductor is a high-performance N-Channel MOSFET designed for demanding applications. It features a maximum voltage rating of 1200V and a continuous drain current of 43A at a case temperature of 25°C, with a power dissipation capability of 176W. This device is housed in a robust TO-247N package, making it suitable for through-hole mounting. The trench structure enhances efficiency and reduces on-resistance, making it ideal for power management in various electronic circuits.
The SCT4036KEHRC11 from Rohm Semiconductor is a high-performance N-Channel MOSFET designed for demanding applications. It features a maximum voltage rating of 1200V and a continuous drain current of 43A at a case temperature of 25°C, with a power dissipation capability of 176W. This device is housed in a robust TO-247N package, making it suitable for through-hole mounting. The trench structure enhances efficiency and reduces on-resistance, making it ideal for power management in various electronic circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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