SCT30N120
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Specification
Specification
SICFET N-CH 1200V 40A HIP247
SICFET N-CH 1200V 40A HIP247
Detailed specification
Detailed specification
N-Channel 1200 V 40A (Tc) 270W (Tc) Through Hole HiP247™
N-Channel 1200 V 40A (Tc) 270W (Tc) Through Hole HiP247™
Description
Description
The SCT30N120 is a Silicon Carbide N-Channel Power MOSFET with a voltage rating of 1200 V and a continuous drain current of 40 A in the HiP247™ package. It features a low on-resistance of 90 mΩ (typ. at TJ = 150 °C) and operates efficiently at high temperatures (TJ = 200 °C). This device is ideal for applications requiring high efficiency and power density.
The SCT30N120 is a Silicon Carbide N-Channel Power MOSFET with a voltage rating of 1200 V and a continuous drain current of 40 A in the HiP247™ package. It features a low on-resistance of 90 mΩ (typ. at TJ = 150 °C) and operates efficiently at high temperatures (TJ = 200 °C). This device is ideal for applications requiring high efficiency and power density.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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