SCT20N120H
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Specification
Specification
SICFET N-CH 1200V 20A H2PAK-2
SICFET N-CH 1200V 20A H2PAK-2
Detailed specification
Detailed specification
N-Channel 1200 V 20A (Tc) 175W (Tc) surface-mounted H2PAK-2
N-Channel 1200 V 20A (Tc) 175W (Tc) surface-mounted H2PAK-2
Description
Description
The SCT20N120H is a silicon carbide N-Channel Power MOSFET with a voltage rating of 1200 V and a continuous drain current of 20 A. It features a low on-resistance of 189 mΩ at 150 °C, high thermal capability (TJ = 175 °C), and a robust intrinsic body diode. This device is optimized for high-efficiency applications, ensuring excellent switching performance and thermal management.
The SCT20N120H is a silicon carbide N-Channel Power MOSFET with a voltage rating of 1200 V and a continuous drain current of 20 A. It features a low on-resistance of 189 mΩ at 150 °C, high thermal capability (TJ = 175 °C), and a robust intrinsic body diode. This device is optimized for high-efficiency applications, ensuring excellent switching performance and thermal management.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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