SCT20N120
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Specification
Specification
SICFET N-CH 1200V 20A HIP247
SICFET N-CH 1200V 20A HIP247
Detailed specification
Detailed specification
N-Channel 1200 V 20A (Tc) 175W (Tc) Through Hole surface-mounted HiP247™
N-Channel 1200 V 20A (Tc) 175W (Tc) Through Hole surface-mounted HiP247™
Description
Description
The SCT20N120 is a silicon carbide N-Channel Power MOSFET with a maximum drain-source voltage of 1200 V and a continuous drain current of 20 A. It features a low on-resistance of 189 mΩ at 150 °C, high thermal stability, and a robust intrinsic body diode, making it ideal for high-efficiency applications.
The SCT20N120 is a silicon carbide N-Channel Power MOSFET with a maximum drain-source voltage of 1200 V and a continuous drain current of 20 A. It features a low on-resistance of 189 mΩ at 150 °C, high thermal stability, and a robust intrinsic body diode, making it ideal for high-efficiency applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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